how u do anything is how u do everything? true???
I still dont believe it.
coz----
I'm not satisfied with myself currently.
and, I believe I can change.
I can change.
Once Again,
I give it another chance to try out.
be the ideal me.
starting 08/03/2007
----------------------------------------------------------------------
I make crappy decisions at times,
however, as long as a plan IS there,
DO TAKE IT INTO ACTION.
Remember, self-esteem fades away when self-disappointment happens again and again.
Once self-esteem is gone, that REALLY is too late...
Friday, August 3, 2007
Wednesday, August 1, 2007
SPICE Model Parameter of MOSFET
from :http://www.seas.upenn.edu/~jan/spice/spice.MOSparamlist.html
LEVEL Model type (1, 2, or 3) 1
L Channel length meters DEFL
W Channel width meters DEFW
LD Lateral diffusion length meters 0
WD Lateral diffusion width meters 0
VTO Zero-bias threshold voltage Volts 0
KP Transconductance Amps/Volts2 2E-5
GAMMA Bulk threshold parameter Volts1/2 0
PHI Surface potential Volts 0.6
LAMBDA Channel-length modulation Volts-1 0
(LEVEL = 1or 2)
RD Drain ohmic resistance Ohms 0
RS Source ohmic resistance Ohms 0
RG Gate ohmic resistance Ohms 0
RB Bulk ohmic resistance Ohms 0
RDS Drain-source shunt resistance Ohms [[infinity]]
RSH Drain-source diffusion sheet Ohms/square 0
resistance
IS Bulk p-n saturation current Amps 1E-14
JS Bulk p-n saturation/current area Amps/meters2 0
PB Bulk p-n potential Volts 0.8
CBD Bulk-drain zero-bias p-n Farads 0
capacitance
CBS Bulk-source zero-bias p-n Farads 0
capacitance
CJ Bulk p-n zero-bias bottom Farads/meters2 0
capacitance/length
CJSW Bulk p-n zero-bias perimeter Farads/meters 0
capacitance/length
MJ Bulk p-n bottom grading 0.5
coefficient
MJSW Bulk p-n sidewall grading 0.33
coefficient
FC Bulk p-n forward-bias 0.5
capacitance coefficient
CGSO Gate-source overlap Farads/meters 0
capacitance/channel width
CGDO Gate-drain overlap Farads/meters 0
capacitance/channel width
CGBO Gate-bulk overlap Farads/meters 0
capacitance/channel width
NSUB Substate doping density 1/centimeter3 0
NSS Surface-state density 1/centimeter2 0
NFS Fast surface-state density 1/centimeter2 0
TOX Oxide thickness meters [[infinity]]
TPG Gate material type: + 1 = + 1
opposite of substrate, - 1 =
same as substrate, 0 =
aluminum
XJ Metallurgical junction depth meters 0
UCRIT Mobility degradation critical Volts/centimete 1E4
field (LEVEL = 2) r
UEXP Mobility degradation exponent 0
(LEVEL = 2)
UTRA (Not Used) mobility degradation
transverse field coefficient
VMAX Maximum drift velocity meters/seconds 0
NEFF Channel charge coefficient 1
(LEVEL = 2)
XQC Fraction of channel charge 1
attributed to drain
DELTA Width effect on threshold 0
THETA Mobility modulation (LEVEL = 3) Volts-1 0
ETA Static feedback (LEVEL = 3) 0
KAPPA Saturation field factor 0.2
(LEVEL=3)
KF Flicker noise coefficient 0
AF Flicker noise exponent 1
body effect
voltage control current source = gm*V_bs
partial derivative V_th/ partial derivative V_sb = yita
partial derivative V_th/ partial derivative V_sb = yita
Great Tech. Advance---goodbye wires from MIT
from: http://web.mit.edu/newsoffice/2007/wireless-0607.html
Goodbye wires…
MIT team experimentally demonstrates wireless power transfer, potentially useful for powering laptops, cell phones without cords
Imagine a future in which wireless power transfer is feasible: cell phones, household robots, mp3 players, laptop computers and other portable electronics capable of charging themselves without ever being plugged in, freeing us from that final, ubiquitous power wire. Some of these devices might not even need their bulky batteries to operate.
..............
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